ITR9908 Features
․Fast response time

․High analytic 

․High sensitivity 

․Cut-off visible wavelength  λP=940nm 

․Pb free 

․This product itself will remain within RoHS compliant version
ITR9908 Descriptions
The ITR9908 consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black thermoplastic housing. The phototransistor receives radiation from the IRED only. This is the normal situation. But when an object is in between, phototransistor could not receives the radiation. For additional component information, please refer to IR204/L10 and PT204-6B.
ITR9908 Applications

․Mouse Copier 

․Switch Scanner 

․Floppy disk driver 

․Non-contact Switching 

․For Direct Board 

ITR9908 Absolute Maximum Ratings (Ta=25℃)

Input Power Dissipation at(or below) 25℃ Free Air Temperature( Pd) 75mW

Input Reverse Voltage (VR) 5V

Input Forward Current ( IF) 50mA

Input Peak Forward Current ( IFP) 1.0 A

Output Collector Power Dissipation (PC)100mW

Output Collector Current( IC) 20mA

Output Collector-Emitter Voltage (BVCEO) 30V

Output Emitter-Collector Voltage( BVECO) 5V

Operating Temperature (Topr) -25~+80℃

Storage Temperature (Tstg) -40~+85℃

Lead Soldering Temperature (Tsol )260 ℃≦5sec

ITR9908 Electro-Optical Characteristics (Ta=25℃)

Input Forward Voltage VF ---(Typ)1.2~(Max )1.5 V ---IF=20mA

Input Reverse Current IR --- (Max)10uA--- VR=5V

Input Peak Wavelength λP ---(Typ) 940nm--- IF=20mA

Input View Angle 2θ1/2---(Typ)35Deg--- IF=20mA

Output Dark Current ICEO --- (Max)100nA--- VCE=10V,Ee=0mW/cm2

Output C-E Saturation voltage VCE(sat) ---(Max)0.4V--- IC=2mA ,Ee=1mW/cm2

Transfer Characteristics Collector Current IC(ON) 0.5~20mA---VCE=5V, IF=20mA

Transfer Characteristics Leakage Current ICEOD---(Max)28uA---VCE=3V, IF=40mA

Transfer Characteristics Rise time tr --- (Typ)25 us--- VCE=5V IC=100uA RL=1KΩ

Transfer Characteristics Fall time tf --- (Typ)25us--- VCE=5V IC=100uA RL=1KΩ