ELSF-511SYGWA/S530-E2 Features
(1)Packaged in tape and reel for SMT manufacturing.
(2)Design flexibility(common cathode or anode).
(3)Categorized for luminous intensity.
(4)The thickness is thinness than tradition display.
(5)Pb free
(6)The product itself will remain within RoHS compliant version
ELSF-511SYGWA/S530-E2 Descriptions
The SMD type is much smaller than tradition type components, thus enable smaller board size, higher packing density, reduced storage space and finally smaller equipment to be obtained.
ELSF-511SYGWA/S530-E2 Applications
(1)Suitable for indoor use.
(2)Audio system.
(3)Set top box.
(4)Game machine.
(5)Channel indicator of TV.
ELSF-511SYGWA/S530-E2 Absolute maximum ratings at Ta = 25℃:
Forward Current IF 25 mA
IF(Peak) 60 mA, Peak Forward Current(Duty 1/10 @ 1KHZ)
Operating Temperature Topr -40 to +85 ℃
Storage Temperature Tstg -40 to +100 ℃
Soldering Temperature Tsol 260 ± 5 ℃
Electrostatic Discharge ESD 2000 V
Power Dissipation Pd 60 mW
Reverse Voltage VR 5V
ELSF-511SYGWA/S530-E2 Electronic optical characteristics :
Luminous Intensity (Per segment)----Min4.0~(Typ)10.8 ---- IF=10mA
uminous Intensity (Per decimal point)----Min2.4~(Typ) 4.9 ---- IF=10mA
Peak Wavelength λp ---- (Typ)575 nm----IF=20mA
Dominant Wavelength λd ---- (Typ)573 nm----IF=20mA
Spectrum Radiation Bandwidth △λ ---- (Typ)20nm----IF=20mA
Forward Voltage VF ----(Typ) 2.0~Max2.4V----IF=20mA
Reverse Current IR ---- Max100 μA---- VR=5V
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