ITR9909 Features
․Fast response time

․High analytic 

․High sensitivity 

․Cut-off visible wavelength  λP=940nm 

․Pb free 

․This product itself will remain within RoHS compliant version
 

ITR9909 Descriptions
The ITR9909 consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black thermoplastic housing . The phototransistor does not receive radiation from IR LED in normal situation, but when an object comes closer, the radiation is reflected by the object and phototransistor receives the more radiation as closer the object comes. For additional component information, please refer to IR and PT.
 

ITR9909 Applications

․Mouse Copier 

․Switch Scanner 

․Floppy disk driver 

․Non-contact Switching 

․For Direct Board 

ITR9909 Absolute Maximum Ratings (Ta=25℃)

Input Power Dissipation at(or below) 25℃ Free Air Temperature( Pd) 100mW

Input Reverse Voltage (VR) 5V

Input Forward Current ( IF) 50mA

Input Peak Forward Current ( IFP) 1.0 A

Output Collector Power Dissipation (PC)100mW

Output Collector Current( IC) 20mA

Output Collector-Emitter Voltage (BVCEO) 30V

Output Emitter-Collector Voltage( BVECO) 5V

Operating Temperature (Topr) -25~+80 ℃

Storage Temperature (Tstg) -40~+100 ℃

Lead Soldering Temperature (Tsol )260 ℃≦5sec

ITR9909 Electro-Optical Characteristics (Ta=25℃)

Input Forward Voltage VF ---(Typ)1.2~(Max )1.5 V ---IF=20mA

Input Reverse Current IR --- (Max)10uA--- VR=5V

Input Peak Wavelength λP ---(Typ) 940nm--- IF=20mA

Input View Angle 2θ1/2---(Typ)60Deg--- IF=20mA

Output Dark Current ICEO --- (Max)100nA--- VCE=20V,Ee=0mW/cm2

Output C-E Saturation voltage VCE(sat) ---(Max)0.4V--- IC=2mA ,Ee=1mW/cm2

Transfer Characteristics Collector Current IC(ON) (Min.)0.2mA---VCE=5V, IF=20mA

Transfer Characteristics Leakage Current ICEOD---(Max)28uA---VCE=5V, IF=20mA

Transfer Characteristics Rise time tr --- (Typ)15 us--- VCE=5V IC=1mA RL=1KΩ

Transfer Characteristics Fall time tf --- (Typ)15us--- VCE=5V IC=1mA RL=1KΩ