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PT334-6B-52 Phototransistor Features
․Fast response time
․High photo sensitivity
․Pb Free
PT334-6B-52 Absolute Maximum Ratings (Ta=25℃)
Collector-Emitter Voltage: 30V
Emitter-Collector-Voltage: 5V
Collector Current:: 20mA
working temperature: - 25 ~ + 85℃
storage temperature: - 40 ~ + 85℃
soldering temperature: infrared baking furnace: 260 ℃/10 seconds, hand soldering: 350 ℃/ 30 seconds
Power Dissipation at (or below) 25℃ Free Air Temperature: 75mW
PT334-6B-52 Electro-Optical Characteristics (Ta=25℃)
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Parameter
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Symbol
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Condition
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Min.
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Typ.
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Max.
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Units
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Collector – Emitter Breakdown Voltage
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BVCEO
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IC=100μA Ee=0mW/cm2
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30
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---
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---
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V
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Emitter-Collector Breakdown Voltage
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BVECO
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IE=100μA Ee=0mW/cm2
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5
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---
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---
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V
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Collector-Emitter Saturation Voltage
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VCE)(sat)
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IC=2mA Ee=1mW/cm2
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---
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---
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0.4
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V
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Rise Time
|
tr
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VCE=5V, IC=1mA, RL=1000Ω
|
---
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15
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---
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μS
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Fall Time
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tf
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---
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15
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---
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μS
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Collector Dark Current
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ICEO
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Ee=0mW/cm2 VCE=20V
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---
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---
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100
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nA
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On State Collector Current
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IC(on)
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Ee=1mW/cm2 VCE=5V
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1.77
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---
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7.07
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mA
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Wavelength of
Peak Sensitivity
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λp
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---
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---
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940
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---
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nm
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Rang of Spectral Bandwidth
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λ0.5
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---
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---
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760-1100
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---
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nm
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PT334-6B-52 Phototransistor Applications: Infrared applied system,Camera,Printer,Cockroach catcher
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