ITR20402 Features
(1)Fast response time
(2)High sensitivity
(3)Thin and small package
(4)Pb free
(5)This product itself will remain within RoHS compliant version
 

ITR20402 Descriptions
The ITR20402 consists of an infrared emitting diode and a silicon phototransistor encased in a black thermo-plastic housing. The advantage of the device is the small package. Phototransistor receives radiation from the IR LED only, and avoids the noise from ambient light.
 

ITR20402 Applications
(1)Camera
(2)Copier
(3)Scanner
(4)Non-contact Switching

ITR20402 Absolute Maximum Ratings (Ta=25℃)

Input Power Dissipation at(or below) 25℃ Free Air Temperature( Pd) 75mW

Input Reverse Voltage (VR) 5V

Input Forward Current ( IF) 50mA

Output Collector Power Dissipation (PC) 75mW

Output Collector Current( IC) 20mA

Output Collector-Emitter Voltage (BVCEO) 30V

Output Emitter-Collector Voltage( BVECO) 5V

Operating Temperature (Topr) -25~+80 ℃

Storage Temperature (Tstg) -40~+85 ℃

Lead Soldering Temperature (Tsol )260 ℃≦5sec

ITR20402 Electro-Optical Characteristics (Ta=25℃)

Input Forward Voltage VF ---(Typ)1.2~(Max )1.5 V ---IF=20mA

Input Reverse Current IR --- (Max)10uA--- VR=5V

Input Peak Wavelength λP ---(Typ) 940nm--- IF=20mA

Output Dark Current ICEO --- (Max)100nA--- VCE=20V

Output C-E Saturation voltage VCE(sat) ---(Max)0.4V--- IC=2mA ,Ee=1mW/cm2

Transfer Characteristics Collector Current IC(ON) (Min.)0.3mA---VCE=5V, IF=20mA

Transfer Characteristics Leakage Current ICEOD---(Max)1uA---VCE=5V, IF=20mA

Transfer Characteristics Rise time tr --- (Typ)20 us--- VCE=2V IC=1mA RL=1KΩ

Transfer Characteristics Fall time tf --- (Typ) 20 us--- VCE=2V IC=1mA RL=1KΩ